| PART |
Description |
Maker |
| MT4953 |
Dual P-Channel High Density Trench MOSFET
|
matrix microtech
|
| ST3401SRG |
ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology.
|
Stanson Technology
|
| STP9434 |
STP9434 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STP9527 |
STP9527 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4488L |
STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.
|
Stanson Technology
|
| STN4392 |
STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4850 |
STN4850 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STP4931 |
STP4931 is the dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| V12P45-M3-15 |
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| V8P8-M3-15 |
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| V10PL45-M3/86A V10PL45-M3/87A |
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
